The GaN semiconductor devices market (henceforth, referred to as the market studied was valued at USD 1256.7 million in 2020, and it is expected to reach USD 3335.46 million by 2026, registering a CAGR of 18.4% over the forecast period (2021 - 2026). GaN has magnificent electrical and chemical properties, such as high-voltage breakdown and saturation velocity, which makes it an ideal solution for applications across a wide range of switching devices.

- The various benefits of GaN such as its cost-effective nature and elimination of cooling requirements have propelled its reach as compared to its contemporaries like silicon and gallium arsenide. The increasing adoption is also reinforced by the increase in demand for energy-efficient semiconductor devices in recent years.

- Additionally, an increasing number of application areas, particularly in the field of computers, automotive, consumer electronics, ICT, and industrial sector, has strengthened the growth of the global market.
- Growing demand for a radio frequency in the semiconductor market, and a prospering consumer electronics industry (particularly LED-based lighting and displays) and rise in electric vehicles and photovoltaic inverters are some of the major market driving factors for the GaN semiconductor devices market. The high production cost of gallium nitride as compared to silicon carbide is one of the major factors, which might hinder the growth of the market.

- With the introduction of 4G networks, there has been an increase in demand for high-power transistors and base stations, which is augmenting the demand for GaN power semiconductors in the ICT segment.
- GaN opto-semiconductor devices, which have wide-ranging applications in LEDs, laser diodes, and optocouplers, are used for high-brightness applications. The growth of this segment is expected to augment the demand for GaN opto-semiconductors.

- The constant increase in defense budgets in both the developing and developed nations and the demand for technologically advanced products in the arsenal of national and international armed forces is expected to further fuel the global market’s growth.

Key Market Trends

Transistors Has The Largest Share In The Market.

- Gallium nitride (GaN) power transistor and integrated circuit technologies have matured dramatically over the past few years, and many of these devices have been manufactured for various applications, ranging from pulsed radars and counter-IED jammers to CATV modules and fourth-generation infrastructure base-stations.
- Lateral GaN transistors possess features, such as lower power losses, higher operating temperatures and smaller systems that are capable of replacing IGBT devices in automotive applications.

- GaN is an emerging technology that shows promise to replace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to optimize system power losses, size, weight, and cost, significantly.
- GaN devices are a high electron mobility transistor (HEMT) with a higher band gap, electron mobility, and electron velocity than silicon and silicon carbide devices. These material characteristics make the GaN device more suitable for higher frequencies and higher voltage operation.

- GaN transistors have continued to improve, allowing amplifier manufacturers to bring to market Solid State Power Amplifiers (SSPA) that operate at higher frequencies and produce higher output power. The trickle of GaN-based amplifiers a few years ago has turned into a full-fledged torrent. UHF Solid State Power Amplifiers (SSPAs) have been developed for use in government and commercial communications satellites.

North America Has Largest Market Share Presently.

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- The growth in the North American GaN semiconductor device market strongly correlates with the boost in end-user industries, such as automotive, ICT, aerospace & defense, healthcare, and consumer electronics. Moreover, the region is home to some of the leading players in the end-user industries, resulting in the largest market share.

- The growth in North America is encouraged by the wider utilization of GaN-based transistors, military radar, and electronic warfare in military applications. Also, the growing demand for LEDs in consumer electronic products, such as televisions, laptops, gaming devices, personal computers, and tablet PCs, has further fuelled the growth of the market studied.

- The United States is the highest spender on defense in the world. The country is expected to spend USD 640 billion in 2018 in military and defense. With Canada expected to follow suit and increase its defense expenditure, the demand for GaN semiconductors in defense is expected to drive the market in the region.
- The US EV market is growing by 18%. Furthermore, the launch of new EV’s from Tesla motors in 2017 is expected to further increase the demand for GaN semiconductors in the North America region.

- The US connected car market is recording a CAGR of 22%. Applications of GaN technology in the connected car segment, such as the infotainment system and all important safety systems, are expected to increase the demand for GaN semiconductor in the region.

- The economic slowdown and weak Canadian dollar negatively affected the consumer electronics market in the country. However, affinity toward technology has resulted in the growth of convertible laptops, ultra HD or 4K Television sets, and other various wireless electronics, thus, increasing the demand for GaN semiconductor in the North American consumer electronics market.

Competitive Landscape

The GaN Semiconductor Devices Market is Highly Fragmented due to a large number of players in the market as the GaN Semiconductor Devices Market have many applications across various industries. Some key players in the market are NXP, Toshiba, Texas Instruments, NTT Advanced Technology Corporation. Some of the key players in the Market are Toshiba Corporation announced the development of its next-generation SCiB, which uses new material to double the capacity of the battery anode in October 2017.

The company announced that Toshiba Memory Corporation(TMC), its wholly-owned subsidiary, chose Kitakami City in the Iwate prefecture as the next location from the expansion of its flash memory operations in September 2017. The company announced the latest addition to its SCiB line-up of innovative lithium-ion rechargeable batteries, the SIP series of modules for automated guided vehicles (AVG), and other types of industrial equipment in March 2017.

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