The report "GaN Power Device Market by Device Type (Power, RF Power), Voltage Range, Application (Power Drives, Supply & Inverter, RF), Vertical (Telecommunications, Consumer, Automotive, Military, Defense, Aerospace), and Geography - Global Forecast to 2023", is projected to reach USD 1.9 million by 2023 at a CAGR of 29.1% from 2017 to 2023. The increasing adoption of GaN RF power devices in the military, defense, and aerospace verticals and the extensive bandgap property of GaN material are major factors fueling the growth of this market.
Gallium nitride (GaN) is a viable alternative to pure silicon in the semiconductors and electronics field. Currently, it is used in several above-normal voltage power applications such as industrial systems, power distribution systems, heavy electrical systems, turbines, heavy machinery, and advanced industrial control systems, among others.
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Adoption of GaN RF Power Devices Anticipated to Remain High During Forecast Period
The need for high power in a variety of bands (very high frequency, ultrahigh frequency, and microwave) has led to the demand for GaN devices, which can supply high watts at RF frequencies up to 10 GHz and above. These devices were developed initially for improvised explosive device (IED) jammers in Iraq. However, GaN RF power devices have emerged as the technology of choice for all new microwave and millimeter-wave electronic warfare.
Telecommunications Expected to be the Leading Vertical of the GaN Power Device Market
The telecommunications vertical is expected to lead the GaN power device market during the forecast period. Earlier, silicon was used primarily for wired communication. However, with technological advancements, wide bandgap semiconductor materials are being used for wired communication. GaN power devices offer advanced power switching and conversion, which increases transmission rates for wired communication devices.
Asia Pacific Projected to be a Leading Revenue Generator of the GaN Power Device Market
Asia Pacific is anticipated to be the major market for GaN power device during the forecast period. The increasing demand for GaN power devices across numerous verticals such as military, aerospace, defense, computing, telecommunications, and automotive in emerging economies such as China, India, Japan, and others is fueling the growth of the market in this region. GaN power devices are gradually replacing silicon in these verticals. Additionally, there is the presence of major players in this region such as Sumitomo Electric Industries, Ltd. (Japan), Mitsubishi Electric Corporation (Japan), and Panasonic Corporation (Japan), and Toshiba Electronic Devices & Storage Corporation (Japan). The presence of these players will offer growth opportunities to the GaN power market in Asia Pacific.
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Microsemi Corporation (Microsemi) (US), Analog Devices, Inc. (Analog Devices) (US), Cree, Inc. (Cree) (US), Qorvo, Inc. (Qorvo) (US), MACOM Technology Solutions Holdings, Inc. (MACOM Technology) (US), Efficient Power Conversion Corporation (Efficient Power Conversion) (US), Integra Technologies, Inc. (Integra) (US), Transphorm Inc. (Transphorm) (US), Navitas Semiconductor Inc. (Navitas Semiconductor) (US), and Texas Instruments Incorporated (Texas Instruments) (US), among others, are some of the other major players in the GaN power device market.